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| INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION *Drain Current -ID= 9A@ TC=25 *Drain Source Voltage: VDSS= 200V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) *Fast Switching Speed APPLICATIONS *Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VDSS VGS ID PD Tj Tstg ARAMETER Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25 Power Dissipation@TC=25 Max. Operating Junction Temperature Storage Temperature Range VALUE 200 30 9 72 150 -55~150 UNIT V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.74 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor *ELECTRICAL CHARACTERISTICS (TC=25) SYMBOL PARAMETER CONDITIONS MIN IRF630B MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 200 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-stage Resistance VGS= 10V; ID= 4.5A 0.4 IGSS Gate Source Leakage Current VGS= 30V; VDS= 0 100 nA IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 10 uA VSD Diode Forward Voltage IF= 9A; VGS= 0 1.5 V isc Websitewww.iscsemi.cn |
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